Optimization of heating wire arrangement in MOCVD on quadratic regression orthogonal rotational combination design

Abstract

AlGaN and AlN, III-nitride semiconductors distinguished by wide bandgaps, strong polarization, and exceptional chemical stability, hold substantial potential for applications in high power and high frequency electronics, high temperature sensors, and optoelectronic devices. These materials thus serve as a cornerstone for next generation technologies. Metal organic chemical vapor deposition (MOCVD) is the preeminent technique for synthesizing high quality AlGaN and AlN films, with vertical showerhead reactors being widely employed due to their efficiency and stability. This study focuses on optimizing the arrangement of heating wires within an MOCVD reaction chamber. Using a quadratic regression orthogonal rotation combination design, we investigated the effects of heating wire width and spacing on temperature distribution within the reaction cavity. By univariate analysis and quadratic regression modeling, we identified the optimal combination of heating wire width and spacing to achieve uniform and stable temperature distribution. Our results show that the heating wire gap has the most significant impact on the average temperature of the mixing chamber, followed by the heating wire width and their interaction effects. The optimized heating wire arrangement markedly enhances the average temperature of the reaction chamber, thereby providing an improved thermal environment for the growth of high quality AlN films. This research offers both theoretical insights and practical guidance for the design and optimization of MOCVD reactors.